{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Lee WY"],"funding":["Korean government","Samsung Science and Technology Foundation","Samsung Electronics Inc. via Samsung Science & Technology Foundation","National Research Foundation of Korea"],"pagination":["e2203455"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC9799017"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["9(36)"],"pubmed_abstract":["When a thermoelectric (TE) material is deposited with a secondary TE material, the total Seebeck coefficient of the stacked layer is generally represented by a parallel conductor model. Accordingly, when TE material layers of the same thickness are stacked vertically, the total Seebeck coefficient in the transverse direction may change in a single layer. Here, an abnormal Seebeck effect in a stacked two-dimensional (2D) PtSe<sub>2</sub> /PtSe<sub>2</sub> homostructure film, i.e., an extra in-plane Seebeck voltage is produced by wet-transfer stacking at the interface between the PtSe<sub>2</sub> layers under a transverse temperature gradient is reported. This abnormal Seebeck effect is referred to as the interfacial Seebeck effect in stacked PtSe<sub>2</sub> /PtSe<sub>2</sub> homostructures. This effect is attributed to the carrier-interface interaction, and has independent characteristics in relation to carrier concentration. It is confirmed that the in-plane Seebeck coefficient increases as the number of stacked PtSe<sub>2</sub> layers increase and observed a high Seebeck coefficient exceeding ≈188 µV K<sup>-1</sup> at 300 K in a four-layer-stacked PtSe<sub>2</sub> /PtSe<sub>2</sub> homostructure."],"journal":["Advanced science (Weinheim, Baden-Wurttemberg, Germany)"],"pubmed_title":["Abnormal Seebeck Effect in Vertically Stacked 2D/2D PtSe<sub>2</sub> /PtSe<sub>2</sub> Homostructure."],"pmcid":["PMC9799017"],"funding_grant_id":["SRFC-MA-2002-05","2020R1A5A1016518","2020R1A2C1004979"],"pubmed_authors":["Kang MS","Lee SK","Kim SH","Kim YH","Saitoh E","Lee WY","Kim GS","Yoon YG","Choi JW","Park NW"],"additional_accession":[]},"is_claimable":false,"name":"Abnormal Seebeck Effect in Vertically Stacked 2D/2D PtSe<sub>2</sub> /PtSe<sub>2</sub> Homostructure.","description":"When a thermoelectric (TE) material is deposited with a secondary TE material, the total Seebeck coefficient of the stacked layer is generally represented by a parallel conductor model. Accordingly, when TE material layers of the same thickness are stacked vertically, the total Seebeck coefficient in the transverse direction may change in a single layer. Here, an abnormal Seebeck effect in a stacked two-dimensional (2D) PtSe<sub>2</sub> /PtSe<sub>2</sub> homostructure film, i.e., an extra in-plane Seebeck voltage is produced by wet-transfer stacking at the interface between the PtSe<sub>2</sub> layers under a transverse temperature gradient is reported. This abnormal Seebeck effect is referred to as the interfacial Seebeck effect in stacked PtSe<sub>2</sub> /PtSe<sub>2</sub> homostructures. This effect is attributed to the carrier-interface interaction, and has independent characteristics in relation to carrier concentration. It is confirmed that the in-plane Seebeck coefficient increases as the number of stacked PtSe<sub>2</sub> layers increase and observed a high Seebeck coefficient exceeding ≈188 µV K<sup>-1</sup> at 300 K in a four-layer-stacked PtSe<sub>2</sub> /PtSe<sub>2</sub> homostructure.","dates":{"release":"2022-01-01T00:00:00Z","publication":"2022 Dec","modification":"2025-04-22T04:31:34.162Z","creation":"2025-04-05T21:01:28.704Z"},"accession":"S-EPMC9799017","cross_references":{"pubmed":["36354191"],"doi":["10.1002/advs.202203455"]}}