<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Lee WY</submitter><funding>Korean government</funding><funding>Samsung Science and Technology Foundation</funding><funding>Samsung Electronics Inc. via Samsung Science &amp; Technology Foundation</funding><funding>National Research Foundation of Korea</funding><pagination>e2203455</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC9799017</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>9(36)</volume><pubmed_abstract>When a thermoelectric (TE) material is deposited with a secondary TE material, the total Seebeck coefficient of the stacked layer is generally represented by a parallel conductor model. Accordingly, when TE material layers of the same thickness are stacked vertically, the total Seebeck coefficient in the transverse direction may change in a single layer. Here, an abnormal Seebeck effect in a stacked two-dimensional (2D) PtSe&lt;sub>2&lt;/sub> /PtSe&lt;sub>2&lt;/sub> homostructure film, i.e., an extra in-plane Seebeck voltage is produced by wet-transfer stacking at the interface between the PtSe&lt;sub>2&lt;/sub> layers under a transverse temperature gradient is reported. This abnormal Seebeck effect is referred to as the interfacial Seebeck effect in stacked PtSe&lt;sub>2&lt;/sub> /PtSe&lt;sub>2&lt;/sub> homostructures. This effect is attributed to the carrier-interface interaction, and has independent characteristics in relation to carrier concentration. It is confirmed that the in-plane Seebeck coefficient increases as the number of stacked PtSe&lt;sub>2&lt;/sub> layers increase and observed a high Seebeck coefficient exceeding ≈188 µV K&lt;sup>-1&lt;/sup> at 300 K in a four-layer-stacked PtSe&lt;sub>2&lt;/sub> /PtSe&lt;sub>2&lt;/sub> homostructure.</pubmed_abstract><journal>Advanced science (Weinheim, Baden-Wurttemberg, Germany)</journal><pubmed_title>Abnormal Seebeck Effect in Vertically Stacked 2D/2D PtSe&lt;sub>2&lt;/sub> /PtSe&lt;sub>2&lt;/sub> Homostructure.</pubmed_title><pmcid>PMC9799017</pmcid><funding_grant_id>SRFC-MA-2002-05</funding_grant_id><funding_grant_id>2020R1A5A1016518</funding_grant_id><funding_grant_id>2020R1A2C1004979</funding_grant_id><pubmed_authors>Kang MS</pubmed_authors><pubmed_authors>Lee SK</pubmed_authors><pubmed_authors>Kim SH</pubmed_authors><pubmed_authors>Kim YH</pubmed_authors><pubmed_authors>Saitoh E</pubmed_authors><pubmed_authors>Lee WY</pubmed_authors><pubmed_authors>Kim GS</pubmed_authors><pubmed_authors>Yoon YG</pubmed_authors><pubmed_authors>Choi JW</pubmed_authors><pubmed_authors>Park NW</pubmed_authors></additional><is_claimable>false</is_claimable><name>Abnormal Seebeck Effect in Vertically Stacked 2D/2D PtSe&lt;sub>2&lt;/sub> /PtSe&lt;sub>2&lt;/sub> Homostructure.</name><description>When a thermoelectric (TE) material is deposited with a secondary TE material, the total Seebeck coefficient of the stacked layer is generally represented by a parallel conductor model. Accordingly, when TE material layers of the same thickness are stacked vertically, the total Seebeck coefficient in the transverse direction may change in a single layer. Here, an abnormal Seebeck effect in a stacked two-dimensional (2D) PtSe&lt;sub>2&lt;/sub> /PtSe&lt;sub>2&lt;/sub> homostructure film, i.e., an extra in-plane Seebeck voltage is produced by wet-transfer stacking at the interface between the PtSe&lt;sub>2&lt;/sub> layers under a transverse temperature gradient is reported. This abnormal Seebeck effect is referred to as the interfacial Seebeck effect in stacked PtSe&lt;sub>2&lt;/sub> /PtSe&lt;sub>2&lt;/sub> homostructures. This effect is attributed to the carrier-interface interaction, and has independent characteristics in relation to carrier concentration. It is confirmed that the in-plane Seebeck coefficient increases as the number of stacked PtSe&lt;sub>2&lt;/sub> layers increase and observed a high Seebeck coefficient exceeding ≈188 µV K&lt;sup>-1&lt;/sup> at 300 K in a four-layer-stacked PtSe&lt;sub>2&lt;/sub> /PtSe&lt;sub>2&lt;/sub> homostructure.</description><dates><release>2022-01-01T00:00:00Z</release><publication>2022 Dec</publication><modification>2025-04-22T04:31:34.162Z</modification><creation>2025-04-05T21:01:28.704Z</creation></dates><accession>S-EPMC9799017</accession><cross_references><pubmed>36354191</pubmed><doi>10.1002/advs.202203455</doi></cross_references></HashMap>