biostudies-literatureXu YDNational Natural Science Foundation of China39https://www.ebi.ac.uk/biostudies/studies/S-EPMC9823911biostudies-literatureUnknown13(1)Resistive random-access memory (RRAM) is a promising candidate for next-generation non-volatile memory. However, due to the random formation and rupture of conductive filaments, RRMS still has disadvantages, such as small storage windows and poor stability. Therefore, the performance of RRAM can be improved by optimizing the formation and rupture of conductive filaments. In this study, a hafnium oxide-/aluminum-doped zinc oxide/hafnium oxide (HfO₂/Al-ZnO/HfO₂) tri-layer structure device was prepared using the sol-gel method. The oxygen-rich vacancy Al-ZnO layer was inserted into the HfO₂ layers. The device had excellent RS properties, such as an excellent switch ratio of 10⁴, retention of 10⁴ s, and multi-level storage capability of siNanomaterials (Basel, Switzerland)Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO₂) Devices via Sol-Gel Method Stacking Tri-Layer HfO₂/Al-ZnO/HfO₂ Structures.PMC9823911Grant Nos.12172093 and 11932016Tang ZLiu QXGuo XBXu YDJiang YPTang XGLi WHZhou YCfalseEnhancement of Resistive Switching Performance in Hafnium Oxide (HfO₂) Devices via Sol-Gel Method Stacking Tri-Layer HfO₂/Al-ZnO/HfO₂ Structures.Resistive random-access memory (RRAM) is a promising candidate for next-generation non-volatile memory. However, due to the random formation and rupture of conductive filaments, RRMS still has disadvantages, such as small storage windows and poor stability. Therefore, the performance of RRAM can be improved by optimizing the formation and rupture of conductive filaments. In this study, a hafnium oxide-/aluminum-doped zinc oxide/hafnium oxide (HfO₂/Al-ZnO/HfO₂) tri-layer structure device was prepared using the sol-gel method. The oxygen-rich vacancy Al-ZnO layer was inserted into the HfO₂ layers. The device had excellent RS properties, such as an excellent switch ratio of 10⁴, retention of 10⁴ s, and multi-level storage capability of si2022-01-01T00:00:00Z2022 Dec2025-04-21T16:19:50.981Z2025-04-21T16:19:50.981ZS-EPMC98239113661594910.3390/nano13010039