{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Zhang S"],"funding":["2021 Harbin Science and technology special plan project","Major Scientific and Technological Achievements Transformation Projects of Heilongjiang Province of China","National Key Research and Development Program of China","Natural Science Foundation of Heilongjiang Province"],"pagination":["767"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC9867089"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["16(2)"],"pubmed_abstract":["As a wide bandgap semiconductor material, silicon carbide has promising prospects for application. However, its commercial production size is currently 6 inches, and the difficulty in preparing larger single crystals increases exponentially with size increasing. Large-size single crystal growth is faced with the enormous problem of radial growth conditions deteriorating. Based on simulation tools, the physical field of 8-inch crystal growth is modeled and studied. By introducing the design of the seed cavity, the radial temperature difference in the seed crystal surface is reduced by 88% from 93 K of a basic scheme to 11 K, and the thermal field conditions with uniform radial temperature and moderate temperature gradient are obtained. Meanwhile, the effects of different processing conditio"],"journal":["Materials (Basel, Switzerland)"],"pubmed_title":["Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth."],"pmcid":["PMC9867089"],"funding_grant_id":["2021YFB3401602","JQ2019E003","CG20A008","2021ZSZZGH10"],"pubmed_authors":["Yang J","Fan G","Zhao L","Li T","Fu G","Chen Y","Zhang S","Cai H"],"additional_accession":[]},"is_claimable":false,"name":"Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth.","description":"As a wide bandgap semiconductor material, silicon carbide has promising prospects for application. However, its commercial production size is currently 6 inches, and the difficulty in preparing larger single crystals increases exponentially with size increasing. Large-size single crystal growth is faced with the enormous problem of radial growth conditions deteriorating. Based on simulation tools, the physical field of 8-inch crystal growth is modeled and studied. By introducing the design of the seed cavity, the radial temperature difference in the seed crystal surface is reduced by 88% from 93 K of a basic scheme to 11 K, and the thermal field conditions with uniform radial temperature and moderate temperature gradient are obtained. Meanwhile, the effects of different processing conditio","dates":{"release":"2023-01-01T00:00:00Z","publication":"2023 Jan","modification":"2025-05-29T20:47:30.043Z","creation":"2024-11-07T08:47:29.909Z"},"accession":"S-EPMC9867089","cross_references":{"pubmed":["36676509"],"doi":["10.3390/ma16020767"]}}