<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>9(12)</volume><submitter>Wang C</submitter><pubmed_abstract>The second-order nonlinear Hall effect observed in the time-reversal symmetric system has not only shown abundant physical content, but also exhibited potential application prospects. Recently, a third-order nonlinear Hall effect has been observed in MoTe&lt;sub>2&lt;/sub> and WTe&lt;sub>2&lt;/sub>. However, few-layer MoTe&lt;sub>2&lt;/sub> and WTe&lt;sub>2&lt;/sub> are usually unstable in air and the observed third-order nonlinear Hall effect can be measured only at low temperature, which hinders further investigation as well as potential application. Thus, exploring new air-stable material systems with a sizable third-order nonlinear Hall effect at room temperature is an urgent task. Here, in type-II Weyl semimetal TaIrTe&lt;sub>4&lt;/sub>, we observed a pronounced third-order nonlinear Hall effect, which can exist at room temperature and remain stable for months. The third-order nonlinear Hall effect is connected to the Berry-connection polarizability tensor instead of the Berry curvature. The possible mechanism of the observation of the third-order nonlinear Hall effect in TaIrTe&lt;sub>4&lt;/sub> at room temperature has been discussed. Our findings will open an avenue towards exploring room-temperature nonlinear devices in new quantum materials.</pubmed_abstract><journal>National science review</journal><pagination>nwac020</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC9869080</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Room-temperature third-order nonlinear Hall effect in Weyl semimetal TaIrTe&lt;sub>4&lt;/sub>.</pubmed_title><pmcid>PMC9869080</pmcid><pubmed_authors>Liu H</pubmed_authors><pubmed_authors>Yang SA</pubmed_authors><pubmed_authors>Wang C</pubmed_authors><pubmed_authors>Gao WB</pubmed_authors><pubmed_authors>Xiao RC</pubmed_authors><pubmed_authors>Cai H</pubmed_authors><pubmed_authors>Zhu C</pubmed_authors><pubmed_authors>Wang N</pubmed_authors><pubmed_authors>Liu Z</pubmed_authors><pubmed_authors>Zhang Z</pubmed_authors><pubmed_authors>Lai S</pubmed_authors><pubmed_authors>Chen S</pubmed_authors><pubmed_authors>Deng Y</pubmed_authors></additional><is_claimable>false</is_claimable><name>Room-temperature third-order nonlinear Hall effect in Weyl semimetal TaIrTe&lt;sub>4&lt;/sub>.</name><description>The second-order nonlinear Hall effect observed in the time-reversal symmetric system has not only shown abundant physical content, but also exhibited potential application prospects. Recently, a third-order nonlinear Hall effect has been observed in MoTe&lt;sub>2&lt;/sub> and WTe&lt;sub>2&lt;/sub>. However, few-layer MoTe&lt;sub>2&lt;/sub> and WTe&lt;sub>2&lt;/sub> are usually unstable in air and the observed third-order nonlinear Hall effect can be measured only at low temperature, which hinders further investigation as well as potential application. Thus, exploring new air-stable material systems with a sizable third-order nonlinear Hall effect at room temperature is an urgent task. Here, in type-II Weyl semimetal TaIrTe&lt;sub>4&lt;/sub>, we observed a pronounced third-order nonlinear Hall effect, which can exist at room temperature and remain stable for months. The third-order nonlinear Hall effect is connected to the Berry-connection polarizability tensor instead of the Berry curvature. The possible mechanism of the observation of the third-order nonlinear Hall effect in TaIrTe&lt;sub>4&lt;/sub> at room temperature has been discussed. Our findings will open an avenue towards exploring room-temperature nonlinear devices in new quantum materials.</description><dates><release>2022-01-01T00:00:00Z</release><publication>2022 Dec</publication><modification>2025-04-04T12:10:38.997Z</modification><creation>2025-02-19T03:00:31.284Z</creation></dates><accession>S-EPMC9869080</accession><cross_references><pubmed>36694799</pubmed><doi>10.1093/nsr/nwac020</doi></cross_references></HashMap>