{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Min L"],"funding":["United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research","National Science Foundation (NSF)","United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research (AF Office of Scientific Research)","National Science Foundation"],"pagination":["364"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC9871029"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["14(1)"],"pubmed_abstract":["Nonlinear Hall effect (NLHE) is a new type of Hall effect with wide application prospects. Practical device applications require strong NLHE at room temperature (RT). However, previously reported NLHEs are all low-temperature phenomena except for the surface NLHE of TaIrTe<sub>4</sub>. Bulk RT NLHE is highly desired due to its ability to generate large photocurrent. Here, we show the spin-valley locked Dirac state in BaMnSb<sub>2</sub> can generate a strong bulk NLHE at RT. In the microscale devices, we observe the typical signature of an intrinsic NLHE, i.e. the transverse Hall voltage quadratically scales with the longitudinal current as the current is applied to the Berry curvature dipole direction. Furthermore, we also demonstrate our nonlinear Hall device's functionality in wireless m"],"journal":["Nature communications"],"pubmed_title":["Strong room-temperature bulk nonlinear Hall effect in a spin-valley locked Dirac material."],"pmcid":["PMC9871029"],"funding_grant_id":["DMR-2039351","FA9550-18-1-0277","Materials Research Science and Engineering Center DMR 2011839 (2020 - 2026)","DMR 2211327"],"pubmed_authors":["Min L","Liu CX","Tan H","Xie Z","Lee SH","Gopalan V","Yan B","Miao L","Zhang R","Alem N","Mao Z"],"additional_accession":[]},"is_claimable":false,"name":"Strong room-temperature bulk nonlinear Hall effect in a spin-valley locked Dirac material.","description":"Nonlinear Hall effect (NLHE) is a new type of Hall effect with wide application prospects. Practical device applications require strong NLHE at room temperature (RT). However, previously reported NLHEs are all low-temperature phenomena except for the surface NLHE of TaIrTe<sub>4</sub>. Bulk RT NLHE is highly desired due to its ability to generate large photocurrent. Here, we show the spin-valley locked Dirac state in BaMnSb<sub>2</sub> can generate a strong bulk NLHE at RT. In the microscale devices, we observe the typical signature of an intrinsic NLHE, i.e. the transverse Hall voltage quadratically scales with the longitudinal current as the current is applied to the Berry curvature dipole direction. Furthermore, we also demonstrate our nonlinear Hall device's functionality in wireless m","dates":{"release":"2023-01-01T00:00:00Z","publication":"2023 Jan","modification":"2026-03-27T15:45:08.066Z","creation":"2025-04-04T13:07:45.272Z"},"accession":"S-EPMC9871029","cross_references":{"pubmed":["36690617"],"doi":["10.1038/s41467-023-35989-0"]}}