{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"omics_type":["Unknown"],"volume":["8(6)"],"submitter":["Lunca-Popa P"],"pubmed_abstract":["Gallium-doped zinc oxide (GZO) films were fabricated using RF magnetron sputtering and atomic layer deposition (ALD). The latter ones demonstrate higher electrical conductivities (up to 2700 S cm<sup>-1</sup>) and enhanced charge mobilities (18 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>). The morphological analysis reveals differences mostly due to the very different nature of the deposition processes. The film deposited via ALD shows an increased transmittance in the visible range and a very small one in the infrared range that leads to a figure of merit of 0.009 Ω<sup>-1</sup> (10 times higher than for the films deposited via sputtering). A benchmarking is made with an RF sputtered indium-doped tin oxide (ITO) film used conventionally in the industry. Another comparison between ZnO, Al:ZnO (AZO), and Ga:ZnO (GZO) films fabricated by ALD is presented, and the evolution of physical properties with doping is evidenced. Finally, we processed GZO thin films on a glass substrate into patterned transparent patch antennas to demonstrate an application case of short-range communication by means of the Bluetooth Low Energy (BLE) protocol. The GZO transparent antennas' performances are compared to a reference ITO antenna on a glass substrate and a conventional copper antenna on FR4 PCB. The results highlight the possibility to use the transparent GZO antenna for reliable short-range communication and the achievability of an antenna entirely processed by ALD."],"journal":["ACS omega"],"pagination":["5475-5485"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC9933467"],"repository":["biostudies-literature"],"pubmed_title":["Study of Gallium-Doped Zinc Oxide Thin Films Processed by Atomic Layer Deposition and RF Magnetron Sputtering for Transparent Antenna Applications."],"pmcid":["PMC9933467"],"pubmed_authors":["Glinsek S","Chemin JB","Bouton O","Maris JP","Adjeroud N","Kovacova V","El Hachemi M","Girod S","Valle N","Lunca-Popa P"],"additional_accession":[]},"is_claimable":false,"name":"Study of Gallium-Doped Zinc Oxide Thin Films Processed by Atomic Layer Deposition and RF Magnetron Sputtering for Transparent Antenna Applications.","description":"Gallium-doped zinc oxide (GZO) films were fabricated using RF magnetron sputtering and atomic layer deposition (ALD). The latter ones demonstrate higher electrical conductivities (up to 2700 S cm<sup>-1</sup>) and enhanced charge mobilities (18 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>). The morphological analysis reveals differences mostly due to the very different nature of the deposition processes. The film deposited via ALD shows an increased transmittance in the visible range and a very small one in the infrared range that leads to a figure of merit of 0.009 Ω<sup>-1</sup> (10 times higher than for the films deposited via sputtering). A benchmarking is made with an RF sputtered indium-doped tin oxide (ITO) film used conventionally in the industry. Another comparison between ZnO, Al:ZnO (AZO), and Ga:ZnO (GZO) films fabricated by ALD is presented, and the evolution of physical properties with doping is evidenced. Finally, we processed GZO thin films on a glass substrate into patterned transparent patch antennas to demonstrate an application case of short-range communication by means of the Bluetooth Low Energy (BLE) protocol. The GZO transparent antennas' performances are compared to a reference ITO antenna on a glass substrate and a conventional copper antenna on FR4 PCB. The results highlight the possibility to use the transparent GZO antenna for reliable short-range communication and the achievability of an antenna entirely processed by ALD.","dates":{"release":"2023-01-01T00:00:00Z","publication":"2023 Feb","modification":"2024-11-11T19:34:27.079Z","creation":"2024-11-11T19:34:27.079Z"},"accession":"S-EPMC9933467","cross_references":{"pubmed":["36816692"],"doi":["10.1021/acsomega.2c06574"]}}