{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"omics_type":["Unknown"],"volume":["35(3)"],"submitter":["Soares J"],"pubmed_abstract":["Two-dimensional (2D) layered materials offer unique properties that make them attractive for continued scaling in electronic and optoelectronic device applications. Successful integration of 2D materials into semiconductor manufacturing requires high-volume and high-precision processes for deposition and etching. Several promising large-scale deposition approaches have been reported for a range of 2D materials, but fewer studies have reported removal processes. Thermal atomic layer etching (ALE) is a scalable processing technique that offers precise control over isotropic material removal. In this work, we report a thermal ALE process for molybdenum disulfide (MoS<sub>2</sub>). We show that MoF<sub>6</sub> can be used as a fluorination source, which, when combined with alternating exposure"],"journal":["Chemistry of materials : a publication of the American Chemical Society"],"pagination":["927-936"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC9933903"],"repository":["biostudies-literature"],"pubmed_title":["Thermal Atomic Layer Etching of MoS<sub>2</sub> Using MoF<sub>6</sub> and H<sub>2</sub>O."],"pmcid":["PMC9933903"],"pubmed_authors":["Choudhury D","Letourneau S","Soares J","Hues SM","Elam JW","Mane AU","Graugnard E"],"additional_accession":[]},"is_claimable":false,"name":"Thermal Atomic Layer Etching of MoS<sub>2</sub> Using MoF<sub>6</sub> and H<sub>2</sub>O.","description":"Two-dimensional (2D) layered materials offer unique properties that make them attractive for continued scaling in electronic and optoelectronic device applications. Successful integration of 2D materials into semiconductor manufacturing requires high-volume and high-precision processes for deposition and etching. Several promising large-scale deposition approaches have been reported for a range of 2D materials, but fewer studies have reported removal processes. Thermal atomic layer etching (ALE) is a scalable processing technique that offers precise control over isotropic material removal. In this work, we report a thermal ALE process for molybdenum disulfide (MoS<sub>2</sub>). We show that MoF<sub>6</sub> can be used as a fluorination source, which, when combined with alternating exposure","dates":{"release":"2023-01-01T00:00:00Z","publication":"2023 Feb","modification":"2025-04-04T18:59:56.992Z","creation":"2025-04-04T18:59:56.992Z"},"accession":"S-EPMC9933903","cross_references":{"pubmed":["36818590"],"doi":["10.1021/acs.chemmater.2c02549"]}}