<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>35(3)</volume><submitter>Soares J</submitter><pubmed_abstract>Two-dimensional (2D) layered materials offer unique properties that make them attractive for continued scaling in electronic and optoelectronic device applications. Successful integration of 2D materials into semiconductor manufacturing requires high-volume and high-precision processes for deposition and etching. Several promising large-scale deposition approaches have been reported for a range of 2D materials, but fewer studies have reported removal processes. Thermal atomic layer etching (ALE) is a scalable processing technique that offers precise control over isotropic material removal. In this work, we report a thermal ALE process for molybdenum disulfide (MoS&lt;sub>2&lt;/sub>). We show that MoF&lt;sub>6&lt;/sub> can be used as a fluorination source, which, when combined with alternating exposure</pubmed_abstract><journal>Chemistry of materials : a publication of the American Chemical Society</journal><pagination>927-936</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC9933903</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Thermal Atomic Layer Etching of MoS&lt;sub>2&lt;/sub> Using MoF&lt;sub>6&lt;/sub> and H&lt;sub>2&lt;/sub>O.</pubmed_title><pmcid>PMC9933903</pmcid><pubmed_authors>Choudhury D</pubmed_authors><pubmed_authors>Letourneau S</pubmed_authors><pubmed_authors>Soares J</pubmed_authors><pubmed_authors>Hues SM</pubmed_authors><pubmed_authors>Elam JW</pubmed_authors><pubmed_authors>Mane AU</pubmed_authors><pubmed_authors>Graugnard E</pubmed_authors></additional><is_claimable>false</is_claimable><name>Thermal Atomic Layer Etching of MoS&lt;sub>2&lt;/sub> Using MoF&lt;sub>6&lt;/sub> and H&lt;sub>2&lt;/sub>O.</name><description>Two-dimensional (2D) layered materials offer unique properties that make them attractive for continued scaling in electronic and optoelectronic device applications. Successful integration of 2D materials into semiconductor manufacturing requires high-volume and high-precision processes for deposition and etching. Several promising large-scale deposition approaches have been reported for a range of 2D materials, but fewer studies have reported removal processes. Thermal atomic layer etching (ALE) is a scalable processing technique that offers precise control over isotropic material removal. In this work, we report a thermal ALE process for molybdenum disulfide (MoS&lt;sub>2&lt;/sub>). We show that MoF&lt;sub>6&lt;/sub> can be used as a fluorination source, which, when combined with alternating exposure</description><dates><release>2023-01-01T00:00:00Z</release><publication>2023 Feb</publication><modification>2025-04-04T18:59:56.992Z</modification><creation>2025-04-04T18:59:56.992Z</creation></dates><accession>S-EPMC9933903</accession><cross_references><pubmed>36818590</pubmed><doi>10.1021/acs.chemmater.2c02549</doi></cross_references></HashMap>