{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Zhuang X"],"funding":["DOD | USAF | AMC | Air Force Research Laboratory","China Postdoctoral Science Foundation | National Postdoctoral Program for Innovative Talents","Natural Science Foundation of Shandong Province","National Natural Science Foundation of China","China Postdoctoral Science Foundation","National Science Foundation"],"pagination":["e2216672120"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC9934017"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["120(3)"],"pubmed_abstract":["Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,000, low saturation voltage of +0.8 ± 0.1 V, and a ~25.6 μW power consumption are realized using an indium oxide In<sub>2</sub>O<sub>3</sub>/In<sub>2</sub>O<sub>3</sub>:polyethylenimine (PEI) blend homojunction with Au contacts on Si/SiO<sub>2</sub>. Kelvin probe force microscopy confirms source-controlled operation of the SGT and reveals that PEI doping leads to more effective depletion of the reverse-biased Schottky contact source region. Furthermore, using a fluoride-doped AlO<sub>x</sub> gate dielectric, rigid (on a Si substrate) and flexible (on a polyimide substrate) SGTs were fabricated. These devices exhibit a low driving voltage of +2 V and power consumption of ~11.5 μW, yielding inverters with an outstanding voltage gain of >5,000. Furthermore, electrooculographic (EOG) signal monitoring can now be demonstrated using an SGT inverter, where a ~1.0 mV EOG signal is amplified to over 300 mV, indicating significant potential for applications in wearable medical sensing and human-computer interfacing."],"journal":["Proceedings of the National Academy of Sciences of the United States of America"],"pubmed_title":["High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction."],"pmcid":["PMC9934017"],"funding_grant_id":["ZR2021QA011","SDBX2021002","ECCS-1542205","DMR-1720139","FA9550-18-1-0320","62104133","2021M701976"],"pubmed_authors":["Chen J","Zhuang X","Marks TJ","Wang G","Yu J","Cheng Y","Kim JS","Facchetti A","Yang Z","Yao Y","Lauhon LJ","Huang W","Chen Y","Wang Z","Liu F"],"additional_accession":[]},"is_claimable":false,"name":"High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction.","description":"Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,000, low saturation voltage of +0.8 ± 0.1 V, and a ~25.6 μW power consumption are realized using an indium oxide In<sub>2</sub>O<sub>3</sub>/In<sub>2</sub>O<sub>3</sub>:polyethylenimine (PEI) blend homojunction with Au contacts on Si/SiO<sub>2</sub>. Kelvin probe force microscopy confirms source-controlled operation of the SGT and reveals that PEI doping leads to more effective depletion of the reverse-biased Schottky contact source region. Furthermore, using a fluoride-doped AlO<sub>x</sub> gate dielectric, rigid (on a Si substrate) and flexible (on a polyimide substrate) SGTs were fabricated. These devices exhibit a low driving voltage of +2 V and power consumption of ~11.5 μW, yielding inverters with an outstanding voltage gain of >5,000. Furthermore, electrooculographic (EOG) signal monitoring can now be demonstrated using an SGT inverter, where a ~1.0 mV EOG signal is amplified to over 300 mV, indicating significant potential for applications in wearable medical sensing and human-computer interfacing.","dates":{"release":"2023-01-01T00:00:00Z","publication":"2023 Jan","modification":"2025-04-20T03:45:44.314Z","creation":"2025-04-20T03:45:44.314Z"},"accession":"S-EPMC9934017","cross_references":{"pubmed":["36630451"],"doi":["10.1073/pnas.2216672120"]}}