biostudies-literatureZhuang XDOD | USAF | AMC | Air Force Research LaboratoryChina Postdoctoral Science Foundation | National Postdoctoral Program for Innovative TalentsNatural Science Foundation of Shandong ProvinceNational Natural Science Foundation of ChinaChina Postdoctoral Science FoundationNational Science Foundatione2216672120https://www.ebi.ac.uk/biostudies/studies/S-EPMC9934017biostudies-literatureUnknown120(3)Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,000, low saturation voltage of +0.8 ± 0.1 V, and a ~25.6 μW power consumption are realized using an indium oxide In₂O₃/In₂O₃:polyethylenimine (PEI) blend homojunction with Au contacts on Si/SiO₂. Kelvin probe force microscopy confirms source-controlled operation of the SGT and reveals that PEI doping leads to more effective depletion of the reverse-biased Schottky contact source region. Furthermore, using a fluoride-doped AlO_x gate dielectric, rigid (on a Si substrate) and flexible (on a polyimide substrate) SGTs were fabricated. These devices exhibit a low driving voltage of +2 V and power consumption of ~11.5 μW, yielding inverters with an outstanding voltage gain of >5,000. Furthermore, electrooculographic (EOG) signal monitoring can now be demonstrated using an SGT inverter, where a ~1.0 mV EOG signal is amplified to over 300 mV, indicating significant potential for applications in wearable medical sensing and human-computer interfacing.Proceedings of the National Academy of Sciences of the United States of AmericaHigh-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction.PMC9934017ZR2021QA011SDBX2021002ECCS-1542205DMR-1720139FA9550-18-1-0320621041332021M701976Chen JZhuang XMarks TJWang GYu JCheng YKim JSFacchetti AYang ZYao YLauhon LJHuang WChen YWang ZLiu FfalseHigh-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction.Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,000, low saturation voltage of +0.8 ± 0.1 V, and a ~25.6 μW power consumption are realized using an indium oxide In₂O₃/In₂O₃:polyethylenimine (PEI) blend homojunction with Au contacts on Si/SiO₂. Kelvin probe force microscopy confirms source-controlled operation of the SGT and reveals that PEI doping leads to more effective depletion of the reverse-biased Schottky contact source region. Furthermore, using a fluoride-doped AlO_x gate dielectric, rigid (on a Si substrate) and flexible (on a polyimide substrate) SGTs were fabricated. These devices exhibit a low driving voltage of +2 V and power consumption of ~11.5 μW, yielding inverters with an outstanding voltage gain of >5,000. Furthermore, electrooculographic (EOG) signal monitoring can now be demonstrated using an SGT inverter, where a ~1.0 mV EOG signal is amplified to over 300 mV, indicating significant potential for applications in wearable medical sensing and human-computer interfacing.2023-01-01T00:00:00Z2023 Jan2025-04-20T03:45:44.314Z2025-04-20T03:45:44.314ZS-EPMC99340173663045110.1073/pnas.2216672120