{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"omics_type":["Unknown"],"submitter":["Cameron D"],"funding":["Engineering and Physical Sciences Research Council"],"pubmed_abstract":["Existing barriers to efficient deep ultraviolet (UV) light-emitting diodes (LEDs) may be reduced or overcome by moving away from conventional planar growth and toward three-dimensional nanostructuring. Nanorods have the potential for enhanced doping, reduced dislocation densities, improved light extraction efficiency, and quantum wells free from the quantum-confined Stark effect. Here, we demonstrate a hybrid top-down/bottom-up approach to creating highly uniform AlGaN core-shell nanorods on sapphire repeatable on wafer scales. Our GaN-free design avoids self-absorption of the quantum well emission while preserving electrical functionality. The effective junctions formed by doping of both the n-type cores and p-type caps were studied using nanoprobing experiments, where we find low turn-on voltages, strongly rectifying behaviors and significant electron-beam-induced currents. Time-resolved cathodoluminescence measurements find short carrier liftetimes consistent with reduced polarization fields. Our results show nanostructuring to be a promising route to deep-UV-emitting LEDs, achievable using commercially compatible methods."],"journal":["Nano letters"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC9951243"],"repository":["biostudies-literature"],"pubmed_title":["Core-Shell Nanorods as Ultraviolet Light-Emitting Diodes."],"pmcid":["PMC9951243"],"funding_grant_id":["EP/M015181/1","EP/R03480X/1"],"pubmed_authors":["Martin RW","Oliver RA","Fairclough S","Coulon PM","Edwards PR","Kusch G","Wernicke T","Kneissl M","Cameron D","Shields PA","Susilo N"],"additional_accession":[]},"is_claimable":false,"name":"Core-Shell Nanorods as Ultraviolet Light-Emitting Diodes.","description":"Existing barriers to efficient deep ultraviolet (UV) light-emitting diodes (LEDs) may be reduced or overcome by moving away from conventional planar growth and toward three-dimensional nanostructuring. Nanorods have the potential for enhanced doping, reduced dislocation densities, improved light extraction efficiency, and quantum wells free from the quantum-confined Stark effect. Here, we demonstrate a hybrid top-down/bottom-up approach to creating highly uniform AlGaN core-shell nanorods on sapphire repeatable on wafer scales. Our GaN-free design avoids self-absorption of the quantum well emission while preserving electrical functionality. The effective junctions formed by doping of both the n-type cores and p-type caps were studied using nanoprobing experiments, where we find low turn-on voltages, strongly rectifying behaviors and significant electron-beam-induced currents. Time-resolved cathodoluminescence measurements find short carrier liftetimes consistent with reduced polarization fields. Our results show nanostructuring to be a promising route to deep-UV-emitting LEDs, achievable using commercially compatible methods.","dates":{"release":"2023-01-01T00:00:00Z","publication":"2023 Feb","modification":"2025-04-05T13:20:29.9Z","creation":"2025-04-05T13:20:29.9Z"},"accession":"S-EPMC9951243","cross_references":{"pubmed":["36748796"],"doi":["10.1021/acs.nanolett.2c04826"]}}