{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Ding Y"],"funding":["he Startup funds of Outstanding Talents of UESTC","the National Youth Talents Plan of China","China North Industries Group Corpora- 228 tion Limited"],"pagination":["405"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC9966885"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["14(2)"],"pubmed_abstract":["Bulk III-nitride materials MN (M = Al, Ga and In) and their alloys have been widely used in high-power electronic and optoelectronic devices, but stable two-dimensional (2D) III-nitride materials, except h-BN, have not been realized yet. A new kind of 2D III-nitride material M2Si2N4 (M = Al, Ga and In) is predicted by choosing Si as the appropriate passivation element. The stability, electronic and optical properties of 2D M2Si2N4 materials are studied systematically based on first-principles calculations. The results show that Al2Si2N4 and Ga2Si2N4 are found to be indirect bandgap semiconductors, while In2Si2N4 is a direct bandgap semiconductor. Moreover, Al2Si2N4 and In2Si2N4 have good absorption ability in the visible light region, while Ga2Si2N4 is an ultraviolet-light-absorbing materi"],"journal":["Micromachines"],"pubmed_title":["Two-Dimensional Octuple-Atomic-Layer M<sub>2</sub>Si<sub>2</sub>N<sub>4</sub> (M = Al, Ga and In) with Long Carrier Lifetime."],"pmcid":["PMC9966885"],"funding_grant_id":["G05QNQR049","KLLDT202106","A1098531023601205"],"pubmed_authors":["Yan L","Zhou L","Ding Y","Yao Y","Zhang J","Li Q","Xue K"],"additional_accession":[]},"is_claimable":false,"name":"Two-Dimensional Octuple-Atomic-Layer M<sub>2</sub>Si<sub>2</sub>N<sub>4</sub> (M = Al, Ga and In) with Long Carrier Lifetime.","description":"Bulk III-nitride materials MN (M = Al, Ga and In) and their alloys have been widely used in high-power electronic and optoelectronic devices, but stable two-dimensional (2D) III-nitride materials, except h-BN, have not been realized yet. A new kind of 2D III-nitride material M2Si2N4 (M = Al, Ga and In) is predicted by choosing Si as the appropriate passivation element. The stability, electronic and optical properties of 2D M2Si2N4 materials are studied systematically based on first-principles calculations. The results show that Al2Si2N4 and Ga2Si2N4 are found to be indirect bandgap semiconductors, while In2Si2N4 is a direct bandgap semiconductor. Moreover, Al2Si2N4 and In2Si2N4 have good absorption ability in the visible light region, while Ga2Si2N4 is an ultraviolet-light-absorbing materi","dates":{"release":"2023-01-01T00:00:00Z","publication":"2023 Feb","modification":"2025-04-26T00:11:27.831Z","creation":"2025-02-18T23:57:52.568Z"},"accession":"S-EPMC9966885","cross_references":{"pubmed":["36838105"],"doi":["10.3390/mi14020405"]}}