Sensitivity of Al-Doped Zinc-Oxide Extended Gate Field Effect Transistors to Low-Dose X-ray Radiation.

ABSTRACT: Herein, we investigated the applicability of thick film and bulk disk forms of aluminum-doped zinc oxide (AZO) for low-dose X-ray radiation dosimetry using the extended gate field effect transistor (EGFET) configuration. The samples were fabricated using the chemical bath deposition (CBD) technique. A thick film of AZO was deposited on a glass substrate, while the bulk disk form was prepared by pressing the collected powders. The prepared samples were characterized via X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM) to determine the crystallinity and surface morphology. The analyses show that the samples are crystalline and comprise nanosheets of varying sizes. The EGFET devices were exposed to different X-ray radiation doses, then characterized by measuring

SUBMITTER: Ali AMA 

PROVIDER: S-EPMC10004138 | biostudies-literature | 2023 Feb

REPOSITORIES: biostudies-literature