Femtosecond Laser-Induced Nano-Joining of Volatile Tellurium Nanotube Memristor.

ABSTRACT: Nanowire/nanotube memristor devices provide great potential for random-access high-density resistance storage. However, fabricating high-quality and stable memristors is still challenging. This paper reports multileveled resistance states of tellurium (Te) nanotube based on the clean-room free femtosecond laser nano-joining method. The temperature for the entire fabrication process was maintained below 190 °C. A femtosecond laser joining technique was used to form nanowire memristor units with enhanced properties. Femtosecond (fs) laser-irradiated silver-tellurium nanotube-silver structures resulted in plasmonic-enhanced optical joining with minimal local thermal effects. This produced a junction between the Te nanotube and the silver film substrate with enhanced electrical contacts. Notic

SUBMITTER: Yu Y 

PROVIDER: S-EPMC10005240 | biostudies-literature | 2023 Feb

REPOSITORIES: biostudies-literature