Pristine GaFeO₃ Photoanodes with Surface Charge Transfer Efficiency of Almost Unity at 1.23 V for Photoelectrochemical Water Splitting.

ABSTRACT: Oxide-based photoelectrodes commonly generate deep trap states associated with various intrinsic defects such as vacancies, antisites, and dislocations, limiting their photoelectrochemical properties. Herein, it is reported that rhombohedral GaFeO₃ (GFO) thin-film photoanodes exhibit defect-inactive features, which manifest themselves by negligible trap-states-associated charge recombination losses during photoelectrochemical water splitting. Unlike conventional defect-tolerant semiconductors, the origin of the defect-inactivity in GFO is the strongly preferred antisite formation, suppressing the generation of other defects that act as deep traps. In addition, defect-inactive GFO films possess really appropriate oxygen vacancy concentration for the oxygen evolution reaction (OER

SUBMITTER: Sun X 

PROVIDER: S-EPMC10015867 | biostudies-literature | 2023 Mar

REPOSITORIES: biostudies-literature