Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moire-gapped graphene.

ABSTRACT: Stacking of graphene with hexagonal boron nitride (h-BN) can dramatically modify its bands from their usual linear form, opening a series of narrow minigaps that are separated by wider minibands. While the resulting spectrum offers strong potential for use in functional (opto)electronic devices, a proper understanding of the dynamics of hot carriers in these bands is a prerequisite for such applications. In this work, we therefore apply a strategy of rapid electrical pulsing to drive carriers in graphene/h-BN heterostructures deep into the dissipative limit of strong electron-phonon coupling. By using electrical gating to move the chemical potential through the "Moiré bands", we demonstrate a cyclical evolution between metallic and semiconducting states. This behavior is captured in a self

SUBMITTER: Nathawat J 

PROVIDER: S-EPMC10023744 | biostudies-literature | 2023 Mar

REPOSITORIES: biostudies-literature