Anisotropy of impact ionization in WSe₂ field effect transistors.

ABSTRACT: Carrier multiplication via impact ionization in two-dimensional (2D) layered materials is a very promising process for manufacturing high-performance devices because the multiplication has been reported to overcome thermodynamic conversion limits. Given that 2D layered materials exhibit highly anisotropic transport properties, understanding the directionally-dependent multiplication process is necessary for device applications. In this study, the anisotropy of carrier multiplication in the 2D layered material, WSe₂, is investigated. To study the multiplication anisotropy of WSe₂, both lateral and vertical WSe₂ field effect transistors (FETs) are fabricated and their electrical and transport properties are investigated. We find that the multiplication anisot

SUBMITTER: Kang T 

PROVIDER: S-EPMC10023822 | biostudies-literature | 2023 Mar

REPOSITORIES: biostudies-literature