Heterogeneous Integration of Atomically-Thin Indium Tungsten Oxide Transistors for Low-Power 3D Monolithic Complementary Inverter.

ABSTRACT: In this work, the authors demonstrate a novel vertically-stacked thin film transistor (TFT) architecture for heterogeneously complementary inverter applications, composed of p-channel polycrystalline silicon (poly-Si) and n-channel amorphous indium tungsten oxide (a-IWO), with a low footprint than planar structure. The a-IWO TFT with channel thickness of approximately 3-4 atomic layers exhibits high mobility of 24 cm² V^-1 s^-1 , near ideally subthreshold swing of 63 mV dec^-1 , low leakage current below 10^-13 A, high on/off current ratio of larger than 10⁹ , extremely small hysteresis of 0 mV, low contact resistance of 0.44 kΩ-µm, and high stability after encapsulating a passivation layer. The electrical characteristics of n-c

SUBMITTER: Li ZH 

PROVIDER: S-EPMC10037976 | biostudies-literature | 2023 Mar

REPOSITORIES: biostudies-literature