Effect of Gate Bias Stress on the Electrical Characteristics of Ferroelectric Oxide Thin-Film Transistors with Poly(Vinylidenefluoride-Trifluoroethylene).

ABSTRACT: We investigated the effect of gate bias stress (GBS) on the electrical characteristics of ferroelectric oxide thin-film transistors (FeOxTFTs) with poly(vinylidenefluoride-trifluoroethylene). Generally, conventional oxide thin-film transistors (OxTFTs) with dielectric gate insulators exhibit a small negative shift under negative gate bias stress (NBS) and a large positive shift under positive gate bias stress (PBS) in transfer characteristic curves. In contrast, the FeOxTFTs show a small positive shift and a large negative shift under NBS and PBS, respectively. It was confirmed that sufficient changes in the electrical characteristics are obtained by 10 min NBS and PBS. The changed electrical characteristics such as threshold voltage shift, memory on- and memory off-current were maintained

SUBMITTER: Gu BS 

PROVIDER: S-EPMC10057146 | biostudies-literature | 2023 Mar

REPOSITORIES: biostudies-literature