Atomistic nonlinear carrier dynamics in Ge.

ABSTRACT: An atomistic technique to successfully demonstrate the ultrafast carrier dynamics in Ge photoconductive samples is reported here. The technique is validated against the experimental findings and with the Drude conductivities. The impact of the various different scattering mechanisms is used to calibrate the experimental results. It is observed that the total scattering rate is not a constant parameter as contrast to Drude model which uses constant scattering rate as the fitting parameter to demonstrate the ultrafast carrier dynamics, but strongly dependent on the applied peak THz field strength. It also contradicts with the relaxation time approximation (RTA) method which uses scattering rate chosen on the empirical basis as the fitting parameter to demonstrate the ultrafast carrier dynami

SUBMITTER: Srivastava A 

PROVIDER: S-EPMC10079653 | biostudies-literature | 2023 Apr

REPOSITORIES: biostudies-literature