First-principles study on electronic states of In₂Se₃/Au heterostructure controlled by strain engineering.

ABSTRACT: The development of low-dimensional multifunctional devices has become increasingly important as the size of field-effect transistors decreases. In recent years, the two-dimensional (2D) semiconductor In₂Se₃ has emerged as a promising candidate for applications in the fields of electronics and optoelectronics owing to its remarkable spontaneous polarization properties. Through first-principles calculations, the effects of the polarization direction and biaxial tensile strain on the electronic and contact properties of In₂Se₃/Au heterostructures are investigated. The contact type of In₂Se₃/Au heterostructures depends on the polarization direction of In₂Se₃. The more charge transfers from the metal to the

SUBMITTER: Han S 

PROVIDER: S-EPMC10088815 | biostudies-literature | 2023 Apr

REPOSITORIES: biostudies-literature