Direct Growth of Patterned Vertical Graphene Using Thermal Stress Mismatch between Barrier Layer and Substrate.

ABSTRACT: Vertical graphene (VG) combines the excellent properties of conventional graphene with a unique vertical nanosheet structure, and has shown tremendous promise in the field of electronics and composites. However, its complex surface morphology brings great difficulties to micro-nano fabrication, especially regarding photolithography induced nanosheet collapse and remaining chemical residues. Here, we demonstrate an innovative method for directly growing patterned VG on a SiO₂/Si substrate. A patterned Cr film was deposited on the substrate as a barrier layer. The VG was synthesized by PECVD on both the patterned Cr film and the exposed SiO₂/Si substrate. During the cooling process, the patterned Cr film covered by VG naturally peeled off from the substrate due to the t

SUBMITTER: Qian F 

PROVIDER: S-EPMC10097022 | biostudies-literature | 2023 Mar

REPOSITORIES: biostudies-literature