Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface.

ABSTRACT: Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over silicon. However, efforts to create atomic-scale devices using donor atoms as qubits have largely focused on phosphorus in silicon. Positioning phosphorus in silicon with atomic-scale precision requires a thermal incorporation anneal, but the low success rate for this step has been shown to be a fundamental limitation prohibiting the scale-up to large-scale devices. Here, we present a comprehensive study of arsine (AsH₃ ) on the germanium (001) surface. We show that, unlike any previously studied dopant precursor on silicon or germanium, arsenic atoms fully incorporate into substitutional surface lattice sites at room tem

SUBMITTER: Hofmann EVS 

PROVIDER: S-EPMC10108107 | biostudies-literature | 2023 Feb

REPOSITORIES: biostudies-literature