Multilevel resistive switching in stable all-inorganic n-i-p double perovskite memristor.

ABSTRACT: Memristors are promising information storage devices for commercial applications because of their long endurance and low power consumption. Particularly, perovskite memristors have revealed excellent resistive switching (RS) properties owing to the fast ion migration and solution fabrication process. Here, an n-i-p type double perovskite memristor with "ITO/SnO₂/Cs₂AgBiBr₆/NiO_x/Ag" architecture was developed and demonstrated to reveal three resistance states because of the p-n junction electric field coupled with ion migration. The devices exhibited reliable filamentary with an on/off ratio exceeding 50. The RS characteristics remained unchanged after 1000 s read and 300 switching cycles. The synaptic functions were examined through long-term dep

SUBMITTER: Zhai S 

PROVIDER: S-EPMC10119588 | biostudies-literature | 2023 Apr

REPOSITORIES: biostudies-literature