Effects of Interface Oxidation on Noise Properties and Performance in III-V Vertical Nanowire Memristors.

ABSTRACT: Memristors implemented as resistive random-access memories (RRAMs) owing to their low power consumption, scalability, and speed are promising candidates for in-memory computing and neuromorphic applications. Moreover, a vertical 3D implementation of RRAMs enables high-density crossbar arrays at a minimal footprint. Co-integrated III-V vertical gate-all-around MOSFET selectors in a one-transistor-one-resistor (1T1R) configuration have recently been demonstrated where an interlayer (IL)-oxide has been shown to enable high RRAM endurance needed for applications like machine learning. In this work, we evaluate the role of the IL-oxide directly on InAs vertical nanowires using low-frequency noise characterization. We show that the low-frequency noise or the 1/f-noise in InAs vertical RRA

SUBMITTER: Saketh Ram M 

PROVIDER: S-EPMC10119853 | biostudies-literature | 2023 Apr

REPOSITORIES: biostudies-literature