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Isothermal Heteroepitaxy of Ge1-x Sn x Structures for Electronic and Photonic Applications.

ABSTRACT: Epitaxy of semiconductor-based quantum well structures is a challenging task since it requires precise control of the deposition at the submonolayer scale. In the case of Ge1-x Sn x alloys, the growth is particularly demanding since the lattice strain and the process temperature greatly impact the composition of the epitaxial layers. In this paper, the realization of high-quality pseudomorphic Ge1-x Sn x layers with Sn content ranging from 6 at. % up to 15 at. % using isothermal processes in an industry-compatible reduced-pressure chemical vapor deposition reactor is presented. The epitaxy of Ge1-x Sn x layers has been optimized for a standard process offering a high Sn concentration at a large process window. By varying the N2 carrier gas flow, isothermal heterostructure designs suitable for quantum transport and spintronic devices are obtained.

SUBMITTER: Concepcion O 

PROVIDER: S-EPMC10134428 | biostudies-literature | 2023 Apr

REPOSITORIES: biostudies-literature

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Isothermal Heteroepitaxy of Ge<sub>1-<i>x</i></sub> Sn <sub><i>x</i></sub> Structures for Electronic and Photonic Applications.

Concepción Omar O   Søgaard Nicolaj B NB   Bae Jin-Hee JH   Yamamoto Yuji Y   Tiedemann Andreas T AT   Ikonic Zoran Z   Capellini Giovanni G   Zhao Qing-Tai QT   Grützmacher Detlev D   Buca Dan D  

ACS applied electronic materials 20230403 4

Epitaxy of semiconductor-based quantum well structures is a challenging task since it requires precise control of the deposition at the submonolayer scale. In the case of Ge<sub>1-<i>x</i></sub> Sn <sub><i>x</i></sub> alloys, the growth is particularly demanding since the lattice strain and the process temperature greatly impact the composition of the epitaxial layers. In this paper, the realization of high-quality pseudomorphic Ge<sub>1-<i>x</i></sub> Sn <sub><i>x</i></sub> layers with Sn conte  ...[more]

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