Threshold-Voltage Extraction Methods for Atomically Deposited Disordered ZnO Thin-Film Transistors.

ABSTRACT: In this paper, we present a threshold-voltage extraction method for zinc oxide (ZnO) thin-film transistors (TFTs). Bottom-gate atomic-layer-deposited ZnO TFTs exhibit typical n-type enhancement-mode transfer characteristics but a gate-voltage-dependent, unreliable threshold voltage. We posit that this obscure threshold voltage is attributed to the localized trap states of ZnO TFTs, of which the field-effect mobility can be expressed as a gate-bias-dependent power law. Hence, we derived the current-voltage relationship by dividing the drain current with the transconductance to rule out the gate-bias-dependent factors and successfully extract the reliable threshold voltage. Furthermore, we investigated the temperature-dependent characteristics of the ZnO TFTs to validate that the observed th

SUBMITTER: Yoon M 

PROVIDER: S-EPMC10144086 | biostudies-literature | 2023 Apr

REPOSITORIES: biostudies-literature