Electronic and Optoelectronic Monolayer WSe₂ Devices via Transfer-Free Fabrication Method.

ABSTRACT: Monolayer transition metal dichalcogenides (TMDs) have drawn significant attention for their potential applications in electronics and optoelectronics. To achieve consistent electronic properties and high device yield, uniform large monolayer crystals are crucial. In this report, we describe the growth of high-quality and uniform monolayer WSe₂ film using chemical vapor deposition on polycrystalline Au substrates. This method allows for the fabrication of continuous large-area WSe₂ film with large-size domains. Additionally, a novel transfer-free method is used to fabricate field-effect transistors (FETs) based on the as-grown WSe₂. The exceptional metal/semiconductor interfaces achieved through this fabrication method result in monolayer WSe₂ FE

SUBMITTER: Wang Z 

PROVIDER: S-EPMC10145331 | biostudies-literature | 2023 Apr

REPOSITORIES: biostudies-literature