Atomistic Insights on Surface Quality Control via Annealing Process in AlGaN Thin Film Growth.

ABSTRACT: Aluminum gallium nitride (AlGaN) is a nanohybrid semiconductor material with a wide bandgap, high electron mobility, and high thermal stability for various applications including high-power electronics and deep ultraviolet light-emitting diodes. The quality of thin films greatly affects their performance in applications in electronics and optoelectronics, whereas optimizing the growth conditions for high quality is a great challenge. Herein, we have investigated the process parameters for the growth of AlGaN thin films via molecular dynamics simulations. The effects of annealing temperature, the heating and cooling rate, the number of annealing rounds, and high temperature relaxation on the quality of AlGaN thin films have been examined for two annealing modes: constant temperature anneali

SUBMITTER: Peng Q 

PROVIDER: S-EPMC10145358 | biostudies-literature | 2023 Apr

REPOSITORIES: biostudies-literature