Nanostructures Stacked on Hafnium Oxide Films Interfacing Graphene and Silicon Oxide Layers as Resistive Switching Media.

ABSTRACT: SiO₂ films were grown to thicknesses below 15 nm by ozone-assisted atomic layer deposition. The graphene was a chemical vapor deposited on copper foil and transferred wet-chemically to the SiO₂ films. On the top of the graphene layer, either continuous HfO₂ or SiO₂ films were grown by plasma-assisted atomic layer deposition or by electron beam evaporation, respectively. Micro-Raman spectroscopy confirmed the integrity of the graphene after the deposition processes of both the HfO₂ and SiO₂. Stacked nanostructures with graphene layers intermediating the SiO₂ and either the SiO₂ or HfO₂ insulator layers were devised as the resistive switching media between the top Ti and bottom TiN electrodes.

SUBMITTER: Kahro T 

PROVIDER: S-EPMC10146930 | biostudies-literature | 2023 Apr

REPOSITORIES: biostudies-literature