Solution-processed zirconium acetylacetonate charge-trap layer for multi-bit nonvolatile thin-film memory transistors.

ABSTRACT: The charge trap property of solution-processed zirconium acetylacetonate (ZAA) for solution-processed nonvolatile charge-trap memory (CTM) transistors is demonstrated. Increasing the annealing temperature of the ZAA from room temperature (RT) to 300°C in ambient, the carbon double bonds within the ZAA decreases. The RT-dried ZAA for the p-type organic-based CTM shows the widest threshold voltage shift (∆V_TH ≈ 80 V), four distinct V_THs for a multi-bit memory operation and retained memory currents for 10³ s with high memory on- and off-current ratio (I_M,ON/I_M,OFF ≈ 5Ⅹ10⁴). The n-type oxide-based CTM (Ox-CTM) also shows a ∆V_TH of 14 V and retained memory currents for 10³ s with

SUBMITTER: Lee S 

PROVIDER: S-EPMC10208136 | biostudies-literature | 2023

REPOSITORIES: biostudies-literature