Bimodal ionic photomemristor based on a high-temperature oxide superconductor/semiconductor junction.

ABSTRACT: Memristors, a cornerstone for neuromorphic electronics, respond to the history of electrical stimuli by varying their electrical resistance across a continuum of states. Much effort has been recently devoted to developing an analogous response to optical excitation. Here we realize a novel tunnelling photo-memristor whose behaviour is bimodal: its resistance is determined by the dual electrical-optical history. This is obtained in a device of ultimate simplicity: an interface between a high-temperature superconductor and a transparent semiconductor. The exploited mechanism is a reversible nanoscale redox reaction between both materials, whose oxygen content determines the electron tunnelling rate across their interface. The redox reaction is optically driven via an interplay between electr

SUBMITTER: El Hage R 

PROVIDER: S-EPMC10212962 | biostudies-literature | 2023 May

REPOSITORIES: biostudies-literature