Ferroelectric Orthorhombic ZrO₂ Thin Films Achieved Through Nanosecond Laser Annealing.

ABSTRACT: A new approach for the stabilization of the ferroelectric orthorhombic ZrO₂ films is demonstrated through nanosecond laser annealing (NLA) of as-deposited Si/SiO_x /W(14 nm)/ZrO₂ (8 nm)/W(22 nm), grown by ion beam sputtering at low temperatures. The NLA process optimization is guided by COMSOL multiphysics simulations. The films annealed under the optimized conditions reveal the presence of the orthorhombic phase, as confirmed by X-ray diffraction, electron backscatter diffraction, and transmission electron microscopy. Macroscopic polarization-electric field hysteresis loops show ferroelectric behavior, with saturation polarization of 12.8 µC cm^-2 , remnant polarization of 12.7 µC cm^-2 and coercive field of 1.2 MV cm^-1 . The

SUBMITTER: Crema APS 

PROVIDER: S-EPMC10214231 | biostudies-literature | 2023 May

REPOSITORIES: biostudies-literature