Schottky barrier height engineering on MoS2 field-effect transistors using a polymer surface modifier on a contact electrode

ABSTRACT: Two-dimensional (2D) materials are highly sought after for their superior semiconducting properties, making them promising candidates for next-generation electronic and optoelectronic devices. Transition-metal dichalcogenides (TMDCs), such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2), are promising alternative 2D materials. However, the devices based on these materials experience performance deterioration due to the formation of a Schottky barrier between metal contacts and semiconducting TMDCs. Here, we performed experiments to reduce the Schottky barrier height of MoS2 field-effect transistors (FETs) by lowering the work function (Фm = Evacuum − EF,metal) of the contact metal. We chose polyethylenimine (PEI), a polymer containing simple aliphatic amine groups (–NH2), as

SUBMITTER: Choi D 

PROVIDER: S-EPMC10232713 | biostudies-literature | 2023 May

REPOSITORIES: biostudies-literature