Asymmetric two-dimensional ferroelectric transistor with anti-ambipolar transport characteristics.

ABSTRACT: Two-dimensional (2D) ferroelectric transistors hold unique properties and positions, especially talking about low-power memories, in-memory computing, and multifunctional logic devices. To achieve better functions, appropriate design of new device structures and material combinations is necessary. We present an asymmetric 2D heterostructure integrating MoTe₂, h-BN, and CuInP₂S₆ as a ferroelectric transistor, which exhibits an unusual property of anti-ambipolar transport characteristic under both positive and negative drain biases. Our results demonstrate that the anti-ambipolar behavior can be modulated by external electric field, achieving a peak-to-valley ratio up to 10³. We also provide a comprehensive explanation for the occurrence and modula

SUBMITTER: Zhao Y 

PROVIDER: S-EPMC10244305 | biostudies-literature | 2023 Jun

REPOSITORIES: biostudies-literature