Dislocation and strain mapping in metamorphic parabolic-graded InGaAs buffers on GaAs.

ABSTRACT: We investigate different architectures for parabolic-graded InGaAs metamorphic buffers grown on GaAs using transmission electron microscopy techniques. The different architectures include InGaP and AlInGaAs/InGaP superlattices with different GaAs substrate misorientations and the inclusion of a strain balancing layer. Our results correlate: (i) the density and distribution of dislocations in the metamorphic buffer and (ii) the strain in the next layer preceding the metamorphic buffer, which varies for each type of architecture. Our findings indicate that the dislocation density in the lower region of the metamorphic layer ranges between 10⁸ and 10¹⁰ cm^-2, with AlInGaAs/InGaP superlattice samples exhibiting higher values compared to samples with InGaP films.

SUBMITTER: Stephen N 

PROVIDER: S-EPMC10261241 | biostudies-literature | 2023

REPOSITORIES: biostudies-literature