Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfO_x bilayer memristive device for neuromorphic computing.

ABSTRACT: Memristive devices have been explored as electronic synaptic devices to mimic biological synapses for developing hardware-based neuromorphic computing systems. However, typical oxide memristive devices suffered from abrupt switching between high and low resistance states, which limits access to achieve various conductance states for analog synaptic devices. Here, we proposed an oxide/suboxide hafnium oxide bilayer memristive device by altering oxygen stoichiometry to demonstrate analog filamentary switching behavior. The bilayer device with Ti/HfO₂/HfO_2-x(oxygen-deficient)/Pt structure exhibited analog conductance states under a low voltage operation through controlling filament geometry as well as superior retention and endurance characteristics thanks to the robust

SUBMITTER: Sahu DP 

PROVIDER: S-EPMC10264419 | biostudies-literature | 2023 Jun

REPOSITORIES: biostudies-literature