Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer-Scale Fabrication.

ABSTRACT: Nanoscale air channel transistors (NACTs) have received significant attention due to their remarkable high-frequency performance and high switching speed, which is enabled by the ballistic transport of electrons in sub-100 nm air channels. Despite these advantages, NACTs are still limited by low currents and instability compared to solid-state devices. GaN, with its low electron affinity, strong thermal and chemical stability, and high breakdown electric field, presents an appealing candidate as a field emission material. Here, a vertical GaN nanoscale air channel diode (NACD) with a 50 nm air channel is reported, fabricated by low-cost IC-compatible manufacturing technologies on a 2-inch sapphire wafer. The device boasts a record field emission current of 11 mA at 10 V in the air and exhi

SUBMITTER: Wei Y 

PROVIDER: S-EPMC10265105 | biostudies-literature | 2023 Jun

REPOSITORIES: biostudies-literature