Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten.

ABSTRACT: 3D integration of III-V semiconductors with Si CMOS is highly attractive since it allows combining new functions such as photonic and analog devices with digital signal processing circuitry. Thus far, most 3D integration approaches have used epitaxial growth on Si, layer transfer by wafer bonding, or die-to-die packaging. Here we present low-temperature integration of InAs on W using Si₃N₄ template assisted selective area metal-organic vapor-phase epitaxy (MOVPE). Despite growth nucleation on polycrystalline W, we can obtain a high yield of single-crystalline InAs nanowires, as observed by transmission electron microscopy (TEM) and electron backscatter diffraction (EBSD). The nanowires exhibit a mobility of 690 cm²/(V s), a low-resistive, Ohmic electrical c

SUBMITTER: Svensson J 

PROVIDER: S-EPMC10273455 | biostudies-literature | 2023 Jun

REPOSITORIES: biostudies-literature