Direct observation of hot-electron-enhanced thermoelectric effects in silicon nanodevices.

ABSTRACT: The study of thermoelectric behaviors in miniatured transistors is of fundamental importance for developing bottom-level thermal management. Recent experimental progress in nanothermetry has enabled studies of the microscopic temperature profiles of nanostructured metals, semiconductors, two-dimensional material, and molecular junctions. However, observations of thermoelectric (such as nonequilibrium Peltier and Thomson) effect in prevailing silicon (Si)-a critical step for on-chip refrigeration using Si itself-have not been addressed so far. Here, we carry out nanothermometric imaging of both electron temperature (T_e) and lattice temperature (T_L) of a Si nanoconstriction device and find obvious thermoelectric effect in the vicinity of the electron hotspots: When the

SUBMITTER: Xue H 

PROVIDER: S-EPMC10287675 | biostudies-literature | 2023 Jun

REPOSITORIES: biostudies-literature