Growth of κ-([Al,In]_xGa_1-x)₂O₃ Quantum Wells and Their Potential for Quantum-Well Infrared Photodetectors.

ABSTRACT: The wide band gap semiconductor κ-Ga₂O₃ and its aluminum and indium alloys have been proposed as promising materials for many applications. One of them is the use of inter-sub-band transitions in quantum-well (QW) systems for infrared detectors. Our simulations show that the detection wavelength range of nowadays state of the art GaAs/Al_xGa_1-xAs quantum-well infrared photodetectors (QWIPs) could be substantially excelled with about 1-100 μm using κ-([Al,In]_xGa_1-x)₂O₃, while at the same time being transparent to visible light and therefore insensitive to photon noise due to its wide band gap, demonstrating the application potential of this material system. Our simulations furt

SUBMITTER: Schultz T 

PROVIDER: S-EPMC10288438 | biostudies-literature | 2023 Jun

REPOSITORIES: biostudies-literature