Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN.

ABSTRACT: The influence of an underlying 2-dimensional electron gas (2DEG) on the performance of a normally off p-type metal oxide semiconductor field effect transistor (MOSFET) based on GaN/AlGaN/GaN double heterojunction is analyzed via simulations. By reducing the concentration of the 2DEG, a greater potential can be dropped across the GaN channel, resulting in enhanced electrostatic control. Therefore, to minimize the deleterious impact on the on-state performance, a composite graded back-to-back AlGaN barrier that enables a trade-off between n-channel devices and Enhancement-mode (E-mode) p-channel is investigated. In simulations, a scaled p-channel GaN device with L_G = 200 nm, L_SD = 600 nm achieves an I_ON of 65 mA/mm, an increase of 44.4% c

SUBMITTER: Zhou J 

PROVIDER: S-EPMC10308811 | biostudies-literature | 2023 Jun

REPOSITORIES: biostudies-literature