Impact of Strain Engineering on Antiferroelectricity in NaNbO₃ Thin Films.

ABSTRACT: Thin films of NaNbO₃ were grown on various substrates to investigate the effect of epitaxial strain on their structural and electrical properties. Reciprocal space maps confirmed the presence of epitaxial strain from +0.8% to -1.2%. A bulk-like antipolar ground state was detected via structural characterization for NaNbO₃ thin films grown with strains ranging from a compressive strain of 0.8% to small tensile strains, up to -0.2%. For larger tensile strains on the other hand, no indication of antipolar displacements can be detected, even beyond the relaxation of the film at larger thicknesses. Electrical characterization revealed a ferroelectric hysteresis loop for thin films under a strain of +0.8% to -0.2%, while the films under larger tensile strain showed no out-o

SUBMITTER: Schneider T 

PROVIDER: S-EPMC10324056 | biostudies-literature | 2023 Jul

REPOSITORIES: biostudies-literature