Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS₂ Thin Films at 150 °C.

ABSTRACT: Two-dimensional MoS₂ is a promising material for applications, including electronics and electrocatalysis. However, scalable methods capable of depositing MoS₂ at low temperatures are scarce. Herein, we present a toolbox of advanced plasma-enhanced atomic layer deposition (ALD) processes, producing wafer-scale polycrystalline MoS₂ films of accurately controlled thickness. Our ALD processes are based on two individually controlled plasma exposures, one optimized for deposition and the other for modification. In this way, film properties can be tailored toward different applications at a very low deposition temperature of 150 °C. For the modification step, either H₂ or Ar plasma can be used to combat excess sulfur incorporation and crystallize the

SUBMITTER: Mattinen M 

PROVIDER: S-EPMC10375433 | biostudies-literature | 2023 Jul

REPOSITORIES: biostudies-literature