Reset-First and Multibit-Level Resistive-Switching Behavior of Lanthanum Nickel Oxide (LaNiO_3-x) Thin Films.

ABSTRACT: The resistive random-access memory (RRAM) with multi-level storage capability has been considered one of the most promising emerging devices to mimic synaptic behavior and accelerate analog computations. In this study, we investigated the reset-first bipolar resistive switching (RS) and multi-level characteristics of a LaNiO_3-x thin film deposited using a reactive magnetron co-sputtering method. Polycrystalline phases of LaNiO₃ (LNO), without La₂O₃ and NiO phases, were observed at similar fractions of Ni and La at a constant partial pressure of oxygen. The relative chemical proportions of Ni³⁺ and Ni²⁺ ions in LaNiO_3-x indicated that it was an oxygen-deficient LaNiO_3-x thin film, exhibiting RS behavior,

SUBMITTER: Kim D 

PROVIDER: S-EPMC10384036 | biostudies-literature | 2023 Jul

REPOSITORIES: biostudies-literature