Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn.

ABSTRACT: GaN/AlN heterostructures with thicknesses of one monolayer (ML) are currently considered to be the most promising material for creating UVC light-emitting devices. A unique functional property of these atomically thin quantum wells (QWs) is their ability to maintain stable excitons, resulting in a particularly high radiation yield at room temperature. However, the intrinsic properties of these excitons are substantially masked by the inhomogeneous broadening caused, in particular, by fluctuations in the QWs' thicknesses. In this work, to reduce this effect, we fabricated cylindrical nanocolumns of 50 to 5000 nm in diameter using GaN/AlN single QW heterostructures grown via molecular beam epitaxy while using photolithography with a combination of wet and reactive ion etching. Photoluminesce

SUBMITTER: Evropeitsev E 

PROVIDER: S-EPMC10386294 | biostudies-literature | 2023 Jul

REPOSITORIES: biostudies-literature