Dataset Information

Sidewall patterning of organic-inorganic multilayer thin film encapsulation by adhesion lithography.

ABSTRACT: A simple sidewall patterning process for organic-inorganic multilayer thin-film encapsulation (TFE) has been proposed and demonstrated. An Al₂O₃ thin film grown by atomic layer deposition (ALD) was patterned by adhesion lithography using the difference in interfacial adhesion strength. The difference in interfacial adhesion strength was provided by the vapor-deposited fluoro-octyl-trichloro-silane self-assembled monolayer (SAM) patterns formed by a shadow mask. The sidewall patterning of multilayer TFE was shown possible by repeating the adhesion lithography and the vapor deposition of organic polymer and SAM patterns using shadow masks. The proposed process has the advantage of being able to pattern the blanket ALD-grown Al₂O₃ thin films by adhesion lithography using a SAM pattern that can be more accurately predefined with a shadow mask.

SUBMITTER: Lee SW

PROVIDER: S-EPMC10390510 | biostudies-literature | 2023 Jul

REPOSITORIES: biostudies-literature

ACCESS DATA

Publications

Sidewall patterning of organic-inorganic multilayer thin film encapsulation by adhesion lithography.

Lee Seung Woo SW Cho Heyjin H Jang Choel-Min CM Huh Myung-Soo MS Cho Sung Min SM

Scientific reports 20230731 1

A simple sidewall patterning process for organic-inorganic multilayer thin-film encapsulation (TFE) has been proposed and demonstrated. An Al<sub>2</sub>O<sub>3</sub> thin film grown by atomic layer deposition (ALD) was patterned by adhesion lithography using the difference in interfacial adhesion strength. The difference in interfacial adhesion strength was provided by the vapor-deposited fluoro-octyl-trichloro-silane self-assembled monolayer (SAM) patterns formed by a shadow mask. The sidewall ...[more]

PMID: 37524726

Similar Datasets

Project description:The key impact and significance of a multilayer polymer-based dielectric system on the remarkable photoresponse properties of zinc phthalocyanine (ZnPc)-based photosensitive organic field-effect transistors (PS-OFETs) have been systematically analyzed at various incident optical powers. A combination of inorganic aluminum oxide (Al2O3) and organic nonpolar poly(methyl methacrylate) (PMMA) is used as the bilayer dielectric configuration, whereas in the trilayer dielectric system, a bilayer polymer dielectric, consisting of PMMA, as the low-k dielectric polymer, on top of poly(vinyl alcohol) (PVA), the high-k polar dielectric, has been fabricated along with Al2O3 as the third layer. Before fabricating the OFETs, a systematic optimization of the nature of growth of the ZnPc molecules, deposited on PMMA-coated glass substrates at different substrate temperatures (T s) was performed and examined by atomic-force microscopy, field-emission scanning electron microscopy, X-ray diffraction, and Raman analysis. At 90 °C, the fabricated PS-OFETs with the Al2O3/PVA/PMMA trilayer dielectric configuration showed the best p-channel behavior, with an enhanced and remarkable photoresponsivity of R ∼ 9689.39 A W-1 compared to that of the Al2O3/PMMA bilayer dielectric system (R ∼ 2679.40 A W-1) due to the polarization of the dipoles inside the polar PVA dielectric, which increases the charge transport through the channel. The charge carrier mobility of the device also improved by one order (μh ∼ 1.3 × 10-2 cm2 V-1 s-1) compared to that of the bilayer dielectric configuration (μh ∼ 3.5 × 10-3 cm2 V-1 s-1). The observed specific detectivity (D*) and NEP values of the bilayer dielectric system were 6.01 × 1013 Jones and 2.655 × 10-17 W Hz-1/2, whereas for the trilayer dielectric system, the observed D* and NEP values were 5.13 × 1014 Jones and 1.043 × 10-17 W Hz-1/2, respectively. Additionally, the operating voltage of each of the fabricated devices was also very low (-10 V) due to the influence of the inorganic high-k Al2O3 dielectric layer. The electrical stability of all of the fabricated devices was also investigated by bias stress analysis under both light and dark conditions in vacuum. To the best of our knowledge, the photoresponsivity (R) reported here with an Al2O3/PVA/PMMA trilayer dielectric configuration is the highest reported value for thin film-based PS-OFETs, at a remarkably low operating voltage of -10 V, on low-cost glass substrates without indium tin oxide or/and Si/SiO2.

Dataset Information

Sidewall patterning of organic-inorganic multilayer thin film encapsulation by adhesion lithography.

Publications

Sidewall patterning of organic-inorganic multilayer thin film encapsulation by adhesion lithography.

Similar Datasets

OmicsDI is part of the ELIXIR infrastructure

Tweets