Interface State Density Prediction between an Insulator and a Semiconductor by Gaussian Process Regression Models for a Modified Process.

ABSTRACT: During data-driven process condition optimization on a laboratory scale, only a small-size data set is accessible and should be effectively utilized. On the other hand, during process development, new operations are frequently inserted or current operations are modified. These accessible data sets are somewhat related but not exactly the same type. In this study, we focus on the prediction of the quality of the interface between an insulator and GaN as a semiconductor for the potential application of GaN power semiconductor devices. The quality of the interface was represented as the interface state density, D_it, and the inserted operation to the process was the ultraviolet (UV)/O₃-gas treatment. Our retrospective evaluation of model-building approaches for

SUBMITTER: Matsunaga K 

PROVIDER: S-EPMC10398861 | biostudies-literature | 2023 Aug

REPOSITORIES: biostudies-literature