Ultralow-energy amorphization of contaminated silicon samples investigated by molecular dynamics.

ABSTRACT: Ion beam processes related to focused ion beam milling, surface patterning, and secondary ion mass spectrometry require precision and control. Quality and cleanliness of the sample are also crucial factors. Furthermore, several domains of nanotechnology and industry use nanoscaled samples that need to be controlled to an extreme level of precision. To reduce the irradiation-induced damage and to limit the interactions of the ions with the sample, low-energy ion beams are used because of their low implantation depths. Yet, low-energy ion beams come with a variety of challenges. When such low energies are used, the residual gas molecules in the instrument chamber can adsorb on the sample surface and impact the ion beam processes. In this paper we pursue an investigation on the effects of the

SUBMITTER: Defoort-Levkov GRN 

PROVIDER: S-EPMC10407782 | biostudies-literature | 2023

REPOSITORIES: biostudies-literature